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| 7MBP25RJ120 IGBT IPM R-series 1200V class Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs. * Low power loss and soft switching. * High performance and high reliability IGBT with overheating protection. * Both P-side and N-side alarm output available. * Higher reliability because of a big decrease in number of parts in built-in control circuit. 1200V / 25A 7 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC IC ICP IF PC VCC Vin Iin VALM IALM Tj Topr Tstg Viso Rating Min. Max. 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 25 50 25 198 15 30 15 120 20 Vcc+0.5 3 Vcc 20 150 100 125 AC2500 3.5 3.5 Unit V V V V A A A W A A A W V V mA V mA C C C V N*m N*m Collector-Emitter voltage *1 Collector current Inverter DC 1ms DC Collector power dissipation One transistor *3 Collector current DC 1ms Forward Current of Diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Terminal (M5) Mounting (M5) Brake Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB. *3 : Pc=125C/IGBT Rth(j-c)=125/0.63=198W [Inverter] Pc=125C/IGBT Rth(j-c)=125/1.04=120W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. 7MBP25RJ120 Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr Condition VCE=1200V Vin terminal open. Ic=25A Terminal Chip -Ic=25A Terminal Chip VCE=1200V Vin terminal open. Ic=15A Terminal -Ic=15A Terminal VDC=600V,Tj=125C IC=25A Fig.1, Fig.6 VDC=600V, IF=25A Fig.1, Fig.6 Min. 0.3 Typ. 2.0 2.4 - IGBT-IPM Max. 1.0 2.6 3.0 1.0 2.6 3.3 3.6 0.3 Unit mA V V mA V s Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Brake Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Inverter Control circuit Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125C Fig.7 ON OFF Rin=20k ohm Tc=-20C Fig.2 Tc=25C Fig.2 Tc=125C Fig.2 Min. Typ. Max. Unit mA mA V V V ms ms ms ohm Unit A A s s C C C C V V 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Min. 38 23 150 VDC=0V, IC=0A CaseTemperature 110 11.0 0.2 Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Typ. 10 Max. 12 125 12.5 Unit C/W C/W C/W Limiting Resistor for Alarm RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH TcOH TcH VUV VH Condition Tj=125C Tj=125C Tj=125C Tj=125C Fig.4 Surface of IGBT chips 20 20 0.5 Max. 0.63 1.33 1.04 - Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance *8 Inverter Brake Case to fin thermal resistance with compound *8 : (For 1 device, Case is under the device) IGBT FWD IGBT Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1s, polarity ,10minuets Judge : no over-current, no miss operating Rise time 1.2s, Fall time 50s Interval 20s, 10 times Judge : no over-current, no miss operating Min. 2.0 5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Unit V V Nm Weight Item Weight Symbol Wt Min. Typ. 450 Max. Unit g 7MBP25RJ120 Vin Vin(th) On Vin(th) 90% 50% IGBT-IPM trr Ic 90% 10% ton toff Figure 1. Switching Time Waveform Definitions /Vin Vge (Inside IPM ) Fault (Inside IPM ) off on Gate On Gate Off on off normal alarm tALM > Max. 1 tALM > Max. /ALM 2 t ALM 2ms(typ.) 3 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic IALM Ic IALM Ic IALM Figure.4 Definition of tsc Vcc 20 k DC 15V P P IPM IPM L + + DC 300V Vin HCPL 4504 VccU DC 15V SW1 20k P IPM U CT GND N Ic VinU GNDU AC200V V DC 15V SW2 20k + Figure 6. Switching Characteristics Test Circuit Vcc VinX GND W 4700p Icc A Noise Vcc P IPM Vin U V W GND N N DC 15V Earth Cooling Fin P.G +8V fsw Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7MBP25RJ120 Block diagram P VccU VinU 4 3 IGBT-IPM ALMU 2 R ALM 1.5k GNDU 1 VccV VinV 8 7 Pre- Driver Vz U ALMV 6 R ALM 1.5k GNDV 5 VccW VinW ALMW 12 Pre - Driver Vz V 11 10 Pre - Driver R ALM 1.5k Vz W GNDW 9 Vcc VinX 14 16 Pre - Driver Vz GND 13 VinY 17 Pre - Driver Vz VinZ Pre-drivers include following functions 18 Pre - Driver Vz 1.Amplifier for driver 2.Short circuit protection B VinDB ALM 15 19 Pre - Driver Vz N 3.Under voltage lockout circuit 4.Over current protection 5.IGBT chip over heating protection R 1.5k ALM Over heating protection circuit Outline drawings, mm 109 95 13.8 _ +0.3 _ +1 _ +0 . 3 66.44 10 _ 6 + 0 . 15 _ +0 . 2 _ 3.22 + 0 . 3 10 _ 6 + 0 . 15 _ +0 . 2 10 _ +0 . 2 12 _ +0 . 25 4- O5 / _ 6 + 0 . 15 _ 2 +0 . 1 2 _ +0.3 1 B _ +0.3 88 _ +1 74 20 10 P 20 N 17 W V U 0.5 0.5 24 26 19- 0.5 26 2- O 2.5 / 6 - M5 7 9 22 +1 . 0 -0.3 22 17 12.5 +1 . 0 -0.3 +1 . 0 -0.2 17 31 - 0 . 3 +0 . 6 Mass : 450g 8 7MBP25RJ120 Characteristics Control circuit characteristics (Respresentative) IGBT-IPM Power supply current vs. Switching fr eque ncy Tj=10 0C 30 P -side V cc = 17V 2.5 Input signal threshold voltage vs. P ower s upply voltage T j= 25 C Tj= 125 C Powe r supply current : Icc (mA) Input s ignal thres hold voltage 25 N-side V cc = 15V V cc = 13V 2 : Vin(on), Vin(off) (V) } Vin(off) 1.5 } Vin(on) 20 15 1 10 V cc = 17V V cc = 15V V cc = 13V 0.5 5 0 0 5 10 15 20 25 0 12 13 14 15 16 17 18 Sw itc hing f req ue nc y : fs w (kHz) Po we r s up ply volta ge : Vc c ( V) U nder voltage vs. Junction tempe ratur e 14 1 12 U nde r voltage hysterisis vs. Jnction tempe ra tur e Under voltag e : VUVT (V) 10 8 Under voltage hy sterisi s : VH (V) 0 .8 0 .6 6 0 .4 4 2 0 .2 0 20 40 60 80 1 00 120 1 40 0 20 Junc tio n tem pe rat ure : Tj (C) 40 60 80 1 00 120 1 40 Junc tion tem pe rat ure : Tj (C) Alarm hold time vs. P ower supply voltage 3 2 00 Over heating c haracteris tic s TcOH ,TjOH ,TcH ,TjH vs. Vcc O ver heating pro tection : T cO H,TjO H (C) Alarm hold t ime : tALM (mSec) 2 .5 Tj= 125 C 2 Tj= 25C 1 .5 TjO H O H hysterisis : TcH,T jH (C) 1 50 T cO H 1 00 1 50 TcH,TjH 0 .5 0 12 13 14 15 16 17 18 0 12 13 14 15 16 17 18 Po we r s up ply vo lta ge : Vc c ( V) Po we r s up ply volta ge : Vc c ( V) 7MBP25RJ120 Main circuit characteristics (Respresentative) IGBT-IPM C ollector current vs. Collector-E mitte r voltage Tj=2 5C ( C hip) 40 V cc= 17 V 35 35 V cc = 13V V cc = 15V 40 C ollector current vs. Collector-E mitte r voltage Tj=2 5C ( Terminal) Vcc= 15 V Vcc= 17 V V cc = 13V 30 25 20 15 10 5 0 Co lle cto r Cur rent : Ic (A) 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 Co llecto r Cur rent : Ic (A) 0 0.5 1 1.5 2 2.5 3 C olle ct or- Emitt er voltage : V ce (V) C olle ct or- Emitt er voltage : V ce (V) C o lle ctor current vs. Colle ctor-Emitter voltage Tj=125C (C hip) 40 V cc = 17V 35 35 V cc= 15 V 40 C o lle ctor current vs. Colle ctor-Emitter voltage Tj=12 5C(T ermina l) Vcc= 15V Vcc= 17 V Colle ct or Curre nt : I c ( A) 30 25 20 15 10 5 0 0 0 .5 1 1.5 2 2.5 3 Colle ct or Curre nt : I c ( A) V cc = 13V 30 25 20 15 10 5 0 0 0 .5 1 1.5 2 2.5 V cc = 13V 3 C olle ct or- Emitt er vo lta ge : V ce ( V) C olle ct or- Emitt er vo lta ge : V ce ( V) Fo rward curre nt vs. Fo rwar d voltage (C hip) 40 1 25 C 35 25 C 30 25 20 15 10 5 0 0 0 .5 1 1 .5 2 2 .5 3 35 30 25 20 15 10 5 0 0 40 Fo rward curre nt vs. Fo rwar d voltage (T ermina l) 1 25 C 25 C F orw ard Current : If (A) F or wa rd Current : I f ( A) 0 .5 1 1 .5 2 2 .5 3 F or wa rd vo lta ge : V f ( V) F or wa rd vo lta ge : V f (V) 7MBP25RJ120 IGBT-IPM Trans ient thermal resistance 10 35 0 Reversed bias ed safe operating area Vcc=15V, T j 125 C Therm al re sis tance : Rt h(j-c) ( C/ W) 30 0 C ollector cu rren t : Ic (A) FW D 1 IG BT 25 0 20 0 S CS OA (no n-re petitive pu lse) 15 0 0 .1 10 0 50 RB S O A (R e petitive pu lse) 0. 01 0 .001 0.01 0 .1 1 0 0 20 0 40 0 600 80 0 1 00 0 1 20 0 1400 P ulse width :P w (se c) C ollector-E m itter volta ge : V ce (V) Power dera ting fo r IGB T (per device) 2 50 1 00 Power derating for FW D (per device) 2 00 Co llecte r P ow er Diss ipatio n : Pc ( W ) 0 20 40 60 80 1 00 1 20 140 1 60 Co llecte r P ow er Diss ipa tio n : Pc ( W) 80 1 50 60 1 00 40 50 20 0 0 0 20 40 60 80 1 00 1 20 140 1 60 Case Temper ature : Tc (C) Case Tem perature : Tc (C) Switching L os s vs. C ollec to r C urre nt Edc=600V,Vcc=15V,Tj=2 5 C 12 Switching L os s vs. C ollecto r C urre nt E dc =60 0V ,V cc =1 5V,Tj=12 5 C 12 Eon 10 S w itching lo ss : Eon,E of f,Err (mJ/c yc le) 10 Sw itching loss : Eon,Eoff,Err (mJ /cycle) 8 Eon 6 8 6 Eo ff 4 4 Eo ff 2 Err 0 0 5 10 15 20 25 30 35 40 2 E rr 0 0 5 10 15 20 25 30 35 40 Colle ctor current : Ic (A) Colle ctor cur rent : Ic (A) 7MBP25RJ120 IGBT-IPM Over current pr otec tio n vs . J unction tempe ra tur e Vc c=15 V 1 00 10 00 Reverse re co ve ry char acte ris tic s trr,Irr vs. IF O ver curre nt pro tectio n level : Io c(A) Reve rse recovery curre nt : Irr(A) Re ve rse re co ve ry tim e : tr r(nSe c) 80 trr125C trr25 C 1 00 60 40 Irr125 C 10 Irr 25 C 20 0 0 20 40 60 80 1 00 1 20 1 40 1 0 J unction tempera tur e : T j(C) For ward current : I F(A) 5 10 15 20 25 30 35 40 Switching time vs. C ollec tor c urrent Edc=6 00 V,Vcc=15V ,Tj=25 C 1 00 00 1 00 00 Switching time vs. C ollec tor c urrent Edc=600V,Vcc=15V,Tj=125 C Sw it ching tim e : to n, tof f,tf (nSe c) to ff 10 00 ton Sw itching tim e : to n,toff,tf (nSec) toff ton 10 00 tf 1 00 tf 1 00 10 0 5 10 15 20 25 30 35 40 10 0 5 10 15 20 25 30 35 40 C ollect or curre nt : Ic ( A) C ollect or curre nt : Ic (A) 7MBP25RJ120 Dynamic Brake Characteristics (Representative) IGBT-IPM C olle ctor curr ent vs. Colle ctor -E mitte r voltage T j=2 5 C 25 25 Vcc= 15 V C ollector curr ent vs. Collector -E mitte r voltage Tj=125C V cc = 15V V cc = 17V V cc = 17V Co lle cto r Curre nt : Ic ( A) Co lle cto r Cur rent : Ic (A) 20 Vcc= 13 V 20 V cc = 13V 15 15 10 10 5 5 0 0 0 .5 1 1 .5 2 2.5 3 0 0 0 .5 1 1 .5 2 2 .5 3 C ollector -Emit ter vo lta ge : V ce ( V) C ollector -Emit ter vo lta ge : Vce (V) Tran sient therm al resista nce 10 21 0 Revers ed bias ed safe oper atin g area Vc c=15V,Tj 125 C T he rmal resistance : Rth(j-c) (C/W ) 18 0 IG B T 1 Collector current : Ic (A) 15 0 12 0 SC S O A (no n-re peti tive pu lse) 90 0 .1 60 30 RBSOA (Re peti tive pu lse) 0 20 0 40 0 600 80 0 1 00 0 1 20 0 140 0 0.01 0 .001 0.0 1 0 .1 1 0 P ulse width :P w (sec) C ollector-E m itte r volta ge : V ce (V) Power der ating fo r IGBT (per device) 1 40 60 Over current pr otec tio n vs . J unction tempe ra tur e Vc c=15 V Co llec te r P ow er Diss ipa tio n : Pc (W ) Over curre nt pr ote ct ion level : I oc(A) 0 20 40 60 80 1 00 1 20 140 1 60 1 20 50 1 00 40 80 60 30 40 20 20 10 0 0 0 20 40 60 80 1 00 1 20 1 40 Ca se Temper ature : Tc (C) Junction temperature : Tj(C) |
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